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| Type | Description |
|---|---|
| Series: | HEXFET® |
| Package: | Tube |
| Part Status: | Obsolete |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 250 V |
| Current - Continuous Drain (Id) @ 25°C: | 57A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 33mOhm @ 35A, 10V |
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 150 nC @ 10 V |
| Vgs (Max): | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds: | 5860 pF @ 25 V |
| FET Feature: | - |
| Power Dissipation (Max): | 360W (Tc) |
| Operating Temperature: | -40°C ~ 175°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-247AC |
| Package / Case: | TO-247-3 |
| Image | Part Number | Description | Stock / Unit Price |
|---|---|---|---|
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AUIRFU4292IR (Infineon Technologies) |
MOSFET N CH 250V 9.3A IPAK |
In Stock: 0 $0.00000 |
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AUIRFU3607IR (Infineon Technologies) |
MOSFET N CH 75V 56A I-PAK |
In Stock: 0 $0.00000 |
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GA03JT12-247GeneSiC Semiconductor |
TRANS SJT 1200V 3A TO247AB |
In Stock: 0 $0.00000 |
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GA06JT12-247GeneSiC Semiconductor |
TRANS SJT 1200V 6A TO247AB |
In Stock: 0 $0.00000 |
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IPD035N06L3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 90A TO252-3 |
In Stock: 0 $0.00000 |
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IPD036N04LGBTMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 90A TO252-3 |
In Stock: 0 $0.00000 |
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IPD053N08N3GBTMA1IR (Infineon Technologies) |
MOSFET N-CH 80V 90A TO252-3 |
In Stock: 0 $0.00000 |
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IPD25CN10NGBUMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 35A TO252-3 |
In Stock: 0 $0.00000 |
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IPD30N06S2L-13IR (Infineon Technologies) |
MOSFET N-CH 55V 30A TO252-3 |
In Stock: 0 $0.00000 |
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SPD07N20GBTMA1IR (Infineon Technologies) |
MOSFET N-CH 200V 7A TO252-3 |
In Stock: 0 $0.00000 |
