| Type | Description |
|---|---|
| Series: | - |
| Package: | Tube |
| Part Status: | Obsolete |
| FET Type: | - |
| Technology: | SiC (Silicon Carbide Junction Transistor) |
| Drain to Source Voltage (Vdss): | 1200 V |
| Current - Continuous Drain (Id) @ 25°C: | 3A (Tc) (95°C) |
| Drive Voltage (Max Rds On, Min Rds On): | - |
| Rds On (Max) @ Id, Vgs: | 460mOhm @ 3A |
| Vgs(th) (Max) @ Id: | - |
| Gate Charge (Qg) (Max) @ Vgs: | - |
| Vgs (Max): | - |
| Input Capacitance (Ciss) (Max) @ Vds: | - |
| FET Feature: | - |
| Power Dissipation (Max): | 15W (Tc) |
| Operating Temperature: | 175°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-247AB |
| Package / Case: | TO-247-3 |
| Image | Part Number | Description | Stock / Unit Price |
|---|---|---|---|
GA06JT12-247GeneSiC Semiconductor |
TRANS SJT 1200V 6A TO247AB |
In Stock: 0 $0.00000 |
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MOSFET N-CH 60V 90A TO252-3 |
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MOSFET N-CH 40V 90A TO252-3 |
In Stock: 0 $0.00000 |
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MOSFET N-CH 80V 90A TO252-3 |
In Stock: 0 $0.00000 |
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MOSFET N-CH 100V 35A TO252-3 |
In Stock: 0 $0.00000 |
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MOSFET N-CH 55V 30A TO252-3 |
In Stock: 0 $0.00000 |
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SPD07N20GBTMA1IR (Infineon Technologies) |
MOSFET N-CH 200V 7A TO252-3 |
In Stock: 0 $0.00000 |
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MOSFET N-CH 30V 14A/40A PQFN |
In Stock: 0 $0.00000 |
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MOSFET N-CH 600V 20A TO263AB |
In Stock: 0 $0.00000 |
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TK16J60W,S1VQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 15.8A TO3P |
In Stock: 0 $0.00000 |