Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Obsolete |
FET Type: | - |
Technology: | SiC (Silicon Carbide Junction Transistor) |
Drain to Source Voltage (Vdss): | 1200 V |
Current - Continuous Drain (Id) @ 25°C: | 6A (Tc) (90°C) |
Drive Voltage (Max Rds On, Min Rds On): | - |
Rds On (Max) @ Id, Vgs: | 220mOhm @ 6A |
Vgs(th) (Max) @ Id: | - |
Gate Charge (Qg) (Max) @ Vgs: | - |
Vgs (Max): | - |
Input Capacitance (Ciss) (Max) @ Vds: | - |
FET Feature: | - |
Power Dissipation (Max): | - |
Operating Temperature: | 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-247AB |
Package / Case: | TO-247-3 |
Image | Part Number | Description | Stock / Unit Price |
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IPD035N06L3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 90A TO252-3 |
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MOSFET N-CH 40V 90A TO252-3 |
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IPD053N08N3GBTMA1IR (Infineon Technologies) |
MOSFET N-CH 80V 90A TO252-3 |
In Stock: 0 $0.00000 |
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MOSFET N-CH 100V 35A TO252-3 |
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MOSFET N-CH 55V 30A TO252-3 |
In Stock: 0 $0.00000 |
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MOSFET N-CH 200V 7A TO252-3 |
In Stock: 0 $0.00000 |
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MOSFET N-CH 30V 14A/40A PQFN |
In Stock: 0 $0.00000 |
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MOSFET N-CH 600V 20A TO263AB |
In Stock: 0 $0.00000 |
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MOSFET N-CH 600V 15.8A TO3P |
In Stock: 0 $0.00000 |
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SI1011X-T1-GE3Vishay / Siliconix |
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In Stock: 0 $0.00000 |