Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 800 V |
Current - Continuous Drain (Id) @ 25°C: | 5.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 1.2Ohm @ 2.75A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 19.4 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 685 pF @ 100 V |
FET Feature: | - |
Power Dissipation (Max): | 110W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-251 (IPAK) |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Image | Part Number | Description | Stock / Unit Price |
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AON6250Alpha and Omega Semiconductor, Inc. |
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BUK7E1R8-40E,127Nexperia |
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FDMS86181Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 44A/124A 8PQFN |
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TK10P60W,RVQToshiba Electronic Devices and Storage Corporation |
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TPW1R306PL,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 260A 8DSOP |
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STL24N60M2STMicroelectronics |
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STB80NF55L-08-1STMicroelectronics |
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FDMS8320LSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 36A/100A 8PQFN |
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SQJQ100E-T1_GE3Vishay / Siliconix |
MOSFET N-CH 40V 200A PPAK 8 X 8 |
In Stock: 1,975 $2.92000 |