Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 500 V |
Current - Continuous Drain (Id) @ 25°C: | 16.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 380mOhm @ 8.3A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 45 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 1945 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 205W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-3PN (L-Forming) |
Package / Case: | TO-3P-3, SC-65-3 (Formed Leads) |
Image | Part Number | Description | Stock / Unit Price |
---|---|---|---|
![]() |
BUK7E1R8-40E,127Nexperia |
MOSFET N-CH 40V 120A I2PAK |
In Stock: 2,490 $2.89000 |
![]() |
FDMS86181Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 44A/124A 8PQFN |
In Stock: 1,882 $2.89000 |
![]() |
TK10P60W,RVQToshiba Electronic Devices and Storage Corporation |
MOSFET N CH 600V 9.7A DPAK |
In Stock: 1,463 $2.89000 |
![]() |
TPW1R306PL,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 260A 8DSOP |
In Stock: 11,663 $2.92000 |
![]() |
STL24N60M2STMicroelectronics |
MOSFET N-CH 600V 18A PWRFLAT HV |
In Stock: 2,970 $2.92000 |
![]() |
STB80NF55L-08-1STMicroelectronics |
MOSFET N-CH 55V 80A I2PAK |
In Stock: 0 $2.92000 |
![]() |
FDMS8320LSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 36A/100A 8PQFN |
In Stock: 1,999 $2.92000 |
![]() |
SQJQ100E-T1_GE3Vishay / Siliconix |
MOSFET N-CH 40V 200A PPAK 8 X 8 |
In Stock: 1,975 $2.92000 |
![]() |
SQJQ100EL-T1_GE3Vishay / Siliconix |
MOSFET N-CH 40V 200A PPAK 8 X 8 |
In Stock: 1,970 $2.92000 |
![]() |
FDB9406-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 110A D2PAK |
In Stock: 1,590 $2.92000 |