| Type | Description |
|---|---|
| Series: | - |
| Package: | Tape & Reel (TR)Cut Tape (CT) |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 150 V |
| Current - Continuous Drain (Id) @ 25°C: | 13.5A (Ta), 52A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
| Rds On (Max) @ Id, Vgs: | 16.5mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id: | 3.4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 43 nC @ 10 V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 2388 pF @ 75 V |
| FET Feature: | - |
| Power Dissipation (Max): | 7.4W (Ta), 104W (Tc) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | 8-DFN (5x6) |
| Package / Case: | 8-PowerSMD, Flat Leads |
| Image | Part Number | Description | Stock / Unit Price |
|---|---|---|---|
![]() |
FDA16N50LDTUSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 16.5A TO3PN |
In Stock: 360 $2.88000 |
BUK7E1R8-40E,127Nexperia |
MOSFET N-CH 40V 120A I2PAK |
In Stock: 2,490 $2.89000 |
|
FDMS86181Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 44A/124A 8PQFN |
In Stock: 1,882 $2.89000 |
|
TK10P60W,RVQToshiba Electronic Devices and Storage Corporation |
MOSFET N CH 600V 9.7A DPAK |
In Stock: 1,463 $2.89000 |
|
TPW1R306PL,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 260A 8DSOP |
In Stock: 11,663 $2.92000 |
|
STL24N60M2STMicroelectronics |
MOSFET N-CH 600V 18A PWRFLAT HV |
In Stock: 2,970 $2.92000 |
|
STB80NF55L-08-1STMicroelectronics |
MOSFET N-CH 55V 80A I2PAK |
In Stock: 0 $2.92000 |
|
FDMS8320LSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 36A/100A 8PQFN |
In Stock: 1,999 $2.92000 |
|
SQJQ100E-T1_GE3Vishay / Siliconix |
MOSFET N-CH 40V 200A PPAK 8 X 8 |
In Stock: 1,975 $2.92000 |
|
SQJQ100EL-T1_GE3Vishay / Siliconix |
MOSFET N-CH 40V 200A PPAK 8 X 8 |
In Stock: 1,970 $2.92000 |