| Type | Description |
|---|---|
| Series: | - |
| Package: | Tube |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 650 V |
| Current - Continuous Drain (Id) @ 25°C: | 4A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 850mOhm @ 2A, 10V |
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 8.3 nC @ 10 V |
| Vgs (Max): | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds: | 455 pF @ 25 V |
| FET Feature: | - |
| Power Dissipation (Max): | 80W (Tc) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | TO-263 |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Image | Part Number | Description | Stock / Unit Price |
|---|---|---|---|
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SQC40016E_DFFRVishay / Siliconix |
N-CHANNEL 40-V (D-S) MOSFET |
In Stock: 0 $2.00000 |
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MOSFET N-CH 650V 17.5A TO262-3 |
In Stock: 0 $2.00006 |
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IPA65R190CFDXKSA2IR (Infineon Technologies) |
MOSFET N-CH 650V 17.5A TO220 |
In Stock: 0 $2.00006 |
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IPI65R190CFDXKSA2IR (Infineon Technologies) |
MOSFET N-CH 650V 17.5A TO262-3 |
In Stock: 0 $2.00006 |
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IPP65R190CFDXKSA2IR (Infineon Technologies) |
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In Stock: 0 $2.00006 |
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TK6A60W,S4VXToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 6.2A TO220SIS |
In Stock: 0 $2.00200 |
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TK8Q60W,S1VQToshiba Electronic Devices and Storage Corporation |
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In Stock: 0 $2.00200 |
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R5013ANJTLROHM Semiconductor |
MOSFET N-CH 500V 13A LPTS |
In Stock: 0 $2.00200 |
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IPB70N10SL16ATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 70A TO263-3 |
In Stock: 0 $2.00585 |
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IRLZ44STRRPBFVishay / Siliconix |
MOSFET N-CH 60V 50A D2PAK |
In Stock: 0 $2.00678 |