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| Type | Description |
|---|---|
| Series: | CoolMOS™ |
| Package: | Tube |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 650 V |
| Current - Continuous Drain (Id) @ 25°C: | 17.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 190mOhm @ 7.3A, 10V |
| Vgs(th) (Max) @ Id: | 4.5V @ 730µA |
| Gate Charge (Qg) (Max) @ Vgs: | 68 nC @ 10 V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 1850 pF @ 100 V |
| FET Feature: | - |
| Power Dissipation (Max): | 151W (Tc) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | PG-TO262-3 |
| Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Image | Part Number | Description | Stock / Unit Price |
|---|---|---|---|
 |
IPA65R190CFDXKSA2IR (Infineon Technologies) |
MOSFET N-CH 650V 17.5A TO220 |
In Stock: 0 $2.00006 |
 |
IPI65R190CFDXKSA2IR (Infineon Technologies) |
MOSFET N-CH 650V 17.5A TO262-3 |
In Stock: 0 $2.00006 |
 |
IPP65R190CFDXKSA2IR (Infineon Technologies) |
MOSFET N-CH 650V 17.5A TO220-3 |
In Stock: 0 $2.00006 |
 |
TK6A60W,S4VXToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 6.2A TO220SIS |
In Stock: 0 $2.00200 |
 |
TK8Q60W,S1VQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 8A IPAK |
In Stock: 0 $2.00200 |
 |
R5013ANJTLROHM Semiconductor |
MOSFET N-CH 500V 13A LPTS |
In Stock: 0 $2.00200 |
 |
IPB70N10SL16ATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 70A TO263-3 |
In Stock: 0 $2.00585 |
 |
IRLZ44STRRPBFVishay / Siliconix |
MOSFET N-CH 60V 50A D2PAK |
In Stock: 0 $2.00678 |
 |
IXTA08N120P-TRLWickmann / Littelfuse |
MOSFET N-CH 1200V 800MA TO263 |
In Stock: 0 $2.00860 |
 |
FDB86563-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 110A D2PAK |
In Stock: 0 $1.76256 |
