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| Type | Description |
|---|---|
| Series: | HEXFET® |
| Package: | Tape & Reel (TR)Cut Tape (CT) |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 55 V |
| Current - Continuous Drain (Id) @ 25°C: | 30A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
| Rds On (Max) @ Id, Vgs: | 14mOhm @ 30A, 10V |
| Vgs(th) (Max) @ Id: | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 92 nC @ 10 V |
| Vgs (Max): | ±16V |
| Input Capacitance (Ciss) (Max) @ Vds: | 1870 pF @ 25 V |
| FET Feature: | - |
| Power Dissipation (Max): | 120W (Tc) |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | D-Pak |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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|---|---|---|---|
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STP40NF03LSTMicroelectronics |
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SI3440DV-T1-E3Vishay / Siliconix |
MOSFET N-CH 150V 1.2A 6TSOP |
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CSD18543Q3ATTexas Instruments |
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In Stock: 109,771,250 $0.99000 |
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FDD3672Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 6.5/44A TO252AA |
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TJ50S06M3L,LXHQToshiba Electronic Devices and Storage Corporation |
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STD7N60M2STMicroelectronics |
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SIR616DP-T1-GE3Vishay / Siliconix |
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In Stock: 2,308 $1.55000 |
