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| Type | Description |
|---|---|
| Series: | STripFET™ |
| Package: | Tube |
| Part Status: | Not For New Designs |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 30 V |
| Current - Continuous Drain (Id) @ 25°C: | 40A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs: | 22mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 15 nC @ 4.5 V |
| Vgs (Max): | ±16V |
| Input Capacitance (Ciss) (Max) @ Vds: | 770 pF @ 25 V |
| FET Feature: | - |
| Power Dissipation (Max): | 70W (Tc) |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-220AB |
| Package / Case: | TO-220-3 |
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|---|---|---|---|
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VN0106N3-GRoving Networks / Microchip Technology |
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CSD18543Q3ATTexas Instruments |
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FDD3672Sanyo Semiconductor/ON Semiconductor |
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TJ50S06M3L,LXHQToshiba Electronic Devices and Storage Corporation |
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In Stock: 2,308 $1.55000 |
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AOI4286Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 100V 4A/14A TO251A |
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