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| Type | Description |
|---|---|
| Series: | - |
| Package: | Bulk |
| Part Status: | Active |
| Diode Configuration: | 1 Pair Common Cathode |
| Diode Type: | Schottky |
| Voltage - DC Reverse (Vr) (Max): | 150 V |
| Current - Average Rectified (Io) (per Diode): | 200A |
| Voltage - Forward (Vf) (Max) @ If: | 880 mV @ 200 A |
| Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr): | - |
| Current - Reverse Leakage @ Vr: | 1 mA @ 150 V |
| Operating Temperature - Junction: | -55°C ~ 150°C |
| Mounting Type: | Chassis Mount |
| Package / Case: | Three Tower |
| Supplier Device Package: | Three Tower |
| Image | Part Number | Description | Stock / Unit Price |
|---|---|---|---|
 |
MBRT400150RGeneSiC Semiconductor |
DIODE SCHOTTKY 150V 200A 3 TOWER |
In Stock: 0 $105.99520 |
 |
F1857CCD1600Sensata Technologies – Crydom |
DIODE MODULE 1.6KV 55A |
In Stock: 0 $111.40000 |
|
F1857RD1600Sensata Technologies – Crydom |
DIODE MODULE 1.6KV 55A |
In Stock: 0 $111.40000 |
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APTDF400AA120GRoving Networks / Microchip Technology |
DIODE MODULE 1.2KV 470A SP6 |
In Stock: 0 $106.14000 |
 |
APTDF400AK120GRoving Networks / Microchip Technology |
DIODE MODULE 1.2KV 470A SP6 |
In Stock: 0 $106.14000 |
 |
MURTA200120GeneSiC Semiconductor |
DIODE GEN 1.2KV 100A 3 TOWER |
In Stock: 0 $106.56056 |
 |
MURTA200120RGeneSiC Semiconductor |
DIODE GEN 1.2KV 100A 3 TOWER |
In Stock: 0 $106.56056 |
 |
MURTA20020GeneSiC Semiconductor |
DIODE GEN PURP 200V 100A 3 TOWER |
In Stock: 0 $106.56056 |
 |
MURTA20020RGeneSiC Semiconductor |
DIODE GEN PURP 200V 100A 3 TOWER |
In Stock: 0 $106.56056 |
 |
MURTA20040GeneSiC Semiconductor |
DIODE GEN PURP 400V 100A 3 TOWER |
In Stock: 0 $106.56056 |
