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| Type | Description |
|---|---|
| Series: | - |
| Package: | Bulk |
| Part Status: | Active |
| Diode Configuration: | 1 Pair Common Anode |
| Diode Type: | Standard |
| Voltage - DC Reverse (Vr) (Max): | 1200 V |
| Current - Average Rectified (Io) (per Diode): | 100A |
| Voltage - Forward (Vf) (Max) @ If: | 2.6 V @ 100 A |
| Speed: | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr): | - |
| Current - Reverse Leakage @ Vr: | 25 µA @ 1200 V |
| Operating Temperature - Junction: | -55°C ~ 150°C |
| Mounting Type: | Chassis Mount |
| Package / Case: | Three Tower |
| Supplier Device Package: | Three Tower |
| Image | Part Number | Description | Stock / Unit Price |
|---|---|---|---|
 |
MURTA20020GeneSiC Semiconductor |
DIODE GEN PURP 200V 100A 3 TOWER |
In Stock: 0 $106.56056 |
 |
MURTA20020RGeneSiC Semiconductor |
DIODE GEN PURP 200V 100A 3 TOWER |
In Stock: 0 $106.56056 |
 |
MURTA20040GeneSiC Semiconductor |
DIODE GEN PURP 400V 100A 3 TOWER |
In Stock: 0 $106.56056 |
 |
MURTA20040RGeneSiC Semiconductor |
DIODE GEN PURP 400V 100A 3 TOWER |
In Stock: 0 $106.56056 |
 |
MURTA20060GeneSiC Semiconductor |
DIODE GEN PURP 600V 100A 3 TOWER |
In Stock: 0 $106.56056 |
 |
MURTA20060RGeneSiC Semiconductor |
DIODE GEN PURP 600V 100A 3 TOWER |
In Stock: 0 $106.56056 |
 |
MURT40040GeneSiC Semiconductor |
DIODE MODULE 400V 400A 3TOWER |
In Stock: 0 $108.89640 |
 |
MURT40010GeneSiC Semiconductor |
DIODE MODULE 100V 400A 3TOWER |
In Stock: 0 $108.89640 |
 |
MURT40010RGeneSiC Semiconductor |
DIODE MODULE 100V 400A 3TOWER |
In Stock: 0 $108.89640 |
 |
MURT40020GeneSiC Semiconductor |
DIODE MODULE 200V 400A 3TOWER |
In Stock: 0 $108.89640 |
