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| Type | Description |
|---|---|
| Series: | POWER MOS 8™ |
| Package: | Tube |
| Part Status: | Active |
| IGBT Type: | PT |
| Voltage - Collector Emitter Breakdown (Max): | 600 V |
| Current - Collector (Ic) (Max): | 96 A |
| Current - Collector Pulsed (Icm): | 161 A |
| Vce(on) (Max) @ Vge, Ic: | 2.5V @ 15V, 32A |
| Power - Max: | 416 W |
| Switching Energy: | 534µJ (on), 466µJ (off) |
| Input Type: | Standard |
| Gate Charge: | 158 nC |
| Td (on/off) @ 25°C: | 17ns/112ns |
| Test Condition: | 400V, 32A, 4.7Ohm, 15V |
| Reverse Recovery Time (trr): | - |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | TO-247 [B] |
| Image | Part Number | Description | Stock / Unit Price |
|---|---|---|---|
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APT15GP90BDQ1GRoving Networks / Microchip Technology |
IGBT 900V 43A 250W TO247 |
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IGBT 1200V 41A 250W TO247 |
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IGBT 1200V 45A 195W TO247 |
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IGBT |
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DISC IGBT XPT-GENX3 TO-3P (3) |
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IGBT 600V 75A 300W TO247AD |
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FGH25N120FTDSSanyo Semiconductor/ON Semiconductor |
IGBT 1200V 50A 313W TO247 |
In Stock: 2 $7.94000 |
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IKFW60N60EH3XKSA1IR (Infineon Technologies) |
INDUSTRY 14 |
In Stock: 0 $5.18758 |
