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| Type | Description |
|---|---|
| Series: | POWER MOS 7® |
| Package: | Tube |
| Part Status: | Active |
| IGBT Type: | PT |
| Voltage - Collector Emitter Breakdown (Max): | 1200 V |
| Current - Collector (Ic) (Max): | 41 A |
| Current - Collector Pulsed (Icm): | 50 A |
| Vce(on) (Max) @ Vge, Ic: | 3.9V @ 15V, 13A |
| Power - Max: | 250 W |
| Switching Energy: | 115µJ (on), 165µJ (off) |
| Input Type: | Standard |
| Gate Charge: | 55 nC |
| Td (on/off) @ 25°C: | 9ns/28ns |
| Test Condition: | 600V, 13A, 5Ohm, 15V |
| Reverse Recovery Time (trr): | - |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | TO-247 [B] |
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|---|---|---|---|
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APT15GN120BDQ1GRoving Networks / Microchip Technology |
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In Stock: 2 $7.94000 |
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INDUSTRY 14 |
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