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| Type | Description |
|---|---|
| Series: | - |
| Package: | Bulk |
| Part Status: | Active |
| Diode Type: | Standard |
| Voltage - DC Reverse (Vr) (Max): | 100 V |
| Current - Average Rectified (Io): | 3A |
| Voltage - Forward (Vf) (Max) @ If: | 1.1 V @ 3 A |
| Speed: | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr): | - |
| Current - Reverse Leakage @ Vr: | 5 µA @ 100 V |
| Capacitance @ Vr, F: | 25pF @ 4V, 1MHz |
| Mounting Type: | Through Hole |
| Package / Case: | DO-201AD, Axial |
| Supplier Device Package: | DO-201AD |
| Operating Temperature - Junction: | -55°C ~ 150°C |
| Image | Part Number | Description | Stock / Unit Price |
|---|---|---|---|
 |
1N5401GHB0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 3A DO201AD |
In Stock: 0 $0.00000 |
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1N5402G B0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 3A DO201AD |
In Stock: 0 $0.00000 |
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1N5402GHB0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 3A DO201AD |
In Stock: 0 $0.00000 |
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1N5404G B0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 3A DO201AD |
In Stock: 0 $0.00000 |
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1N5404GHB0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 3A DO201AD |
In Stock: 0 $0.00000 |
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1N5406G B0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 3A DO201AD |
In Stock: 0 $0.00000 |
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1N5406GHB0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 3A DO201AD |
In Stock: 0 $0.00000 |
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1N5407G B0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 800V 3A DO201AD |
In Stock: 0 $0.00000 |
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1N5407GHB0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 800V 3A DO201AD |
In Stock: 0 $0.00000 |
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1N5408G B0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 3A DO201AD |
In Stock: 0 $0.00000 |
