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| Type | Description |
|---|---|
| Series: | * |
| Package: | Bulk |
| Part Status: | Active |
| Diode Type: | Standard |
| Voltage - DC Reverse (Vr) (Max): | 1200 V |
| Current - Average Rectified (Io): | 150A (DC) |
| Voltage - Forward (Vf) (Max) @ If: | 1.41 V @ 45 A |
| Speed: | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr): | - |
| Current - Reverse Leakage @ Vr: | 27 µA @ 1200 V |
| Capacitance @ Vr, F: | - |
| Mounting Type: | - |
| Package / Case: | - |
| Supplier Device Package: | - |
| Operating Temperature - Junction: | -40°C ~ 175°C |
| Image | Part Number | Description | Stock / Unit Price |
|---|---|---|---|
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SIDC105D120H8X1SA1IR (Infineon Technologies) |
DIODE GEN PURP 1.2KV 200A WAFER |
In Stock: 0 $0.00000 |
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DIODE GEN PURP 1.2KV 75A WAFER |
In Stock: 0 $0.00000 |
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SIDC53D120H8X1SA1IR (Infineon Technologies) |
DIODE GEN PURP 1.2KV 100A WAFER |
In Stock: 0 $0.00000 |
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SIDC81D120H8X1SA3IR (Infineon Technologies) |
DIODE GEN PURP 1.2KV 150A WAFER |
In Stock: 0 $0.00000 |
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IRD3CH101DB6IR (Infineon Technologies) |
DIODE GEN PURP 1.2KV 200A DIE |
In Stock: 0 $0.00000 |
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DIODE CHIP EMITTER CONTROLLED |
In Stock: 0 $0.00000 |
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DIODE CHIP EMITTER CONTROLLED |
In Stock: 0 $0.00000 |
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IRD3CH11DB6IR (Infineon Technologies) |
DIODE GEN PURP 1.2KV 25A DIE |
In Stock: 0 $0.00000 |
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IRD3CH11DD6IR (Infineon Technologies) |
DIODE CHIP EMITTER CONTROLLED |
In Stock: 0 $0.00000 |
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IRD3CH11DF6IR (Infineon Technologies) |
DIODE CHIP EMITTER CONTROLLED |
In Stock: 0 $0.00000 |
