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| Type | Description |
|---|---|
| Series: | - |
| Package: | Tube |
| Part Status: | Obsolete |
| Diode Type: | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max): | 1200 V |
| Current - Average Rectified (Io): | 8A (DC) |
| Voltage - Forward (Vf) (Max) @ If: | 1.6 V @ 2.5 A |
| Speed: | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr): | 0 ns |
| Current - Reverse Leakage @ Vr: | 10 µA @ 1200 V |
| Capacitance @ Vr, F: | 237pF @ 1V, 1MHz |
| Mounting Type: | Through Hole |
| Package / Case: | TO-257-3 |
| Supplier Device Package: | TO-257 |
| Operating Temperature - Junction: | -55°C ~ 250°C |
| Image | Part Number | Description | Stock / Unit Price |
|---|---|---|---|
 |
1N8028-GAGeneSiC Semiconductor |
DIODE SCHOTTKY 1.2KV 9.4A TO257 |
In Stock: 0 $0.00000 |
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1N8030-GAGeneSiC Semiconductor |
DIODE SCHOTTKY 650V 750MA TO257 |
In Stock: 0 $0.00000 |
 |
1N8031-GAGeneSiC Semiconductor |
DIODE SCHOTTKY 650V 1A TO276 |
In Stock: 0 $0.00000 |
 |
1N8032-GAGeneSiC Semiconductor |
DIODE SCHOTTKY 650V 2.5A TO257 |
In Stock: 0 $0.00000 |
 |
1N8033-GAGeneSiC Semiconductor |
DIODE SCHOTTKY 650V 4.3A TO276 |
In Stock: 0 $0.00000 |
 |
1N8034-GAGeneSiC Semiconductor |
DIODE SCHOTTKY 650V 9.4A TO257 |
In Stock: 0 $0.00000 |
 |
1N8035-GAGeneSiC Semiconductor |
DIODE SCHOTTKY 650V 14.6A TO276 |
In Stock: 0 $0.00000 |
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GB01SLT12-220GeneSiC Semiconductor |
DIODE SCHOTTKY 1.2KV 1A TO220AC |
In Stock: 0 $0.00000 |
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GB05SLT12-220GeneSiC Semiconductor |
DIODE SCHOTTKY 1.2KV 5A TO220AC |
In Stock: 0 $0.00000 |
 |
GB05SLT12-252GeneSiC Semiconductor |
DIODE SILICON 1.2KV 5A TO252 |
In Stock: 0 $0.00000 |
