Type | Description |
---|---|
Series: | Automotive, AEC-Q101 |
Package: | Tube |
Part Status: | Active |
Diode Type: | Silicon Carbide Schottky |
Voltage - DC Reverse (Vr) (Max): | 1200 V |
Current - Average Rectified (Io): | 15A (DC) |
Voltage - Forward (Vf) (Max) @ If: | - |
Speed: | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr): | 0 ns |
Current - Reverse Leakage @ Vr: | 200 µA @ 1200 V |
Capacitance @ Vr, F: | 612pF @ 1V, 100kHz |
Mounting Type: | Through Hole |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247-3 |
Operating Temperature - Junction: | -55°C ~ 175°C |
Image | Part Number | Description | Stock / Unit Price |
---|---|---|---|
![]() |
1N6622Roving Networks / Microchip Technology |
DIODE GEN PURP 600V 1.2A AXIAL |
In Stock: 0 $9.09000 |
![]() |
1N6621Roving Networks / Microchip Technology |
DIODE GEN PURP 440V 1.2A AXIAL |
In Stock: 0 $9.09000 |
![]() |
1N6621US/TRRoving Networks / Microchip Technology |
UFR,FRR |
In Stock: 0 $9.11300 |
![]() |
VS-1N3766Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 35A DO203AB |
In Stock: 0 $9.46700 |
![]() |
VS-1N3766RVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 35A DO203AB |
In Stock: 0 $9.46700 |
![]() |
VS-1N2133RAVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 300V 60A DO203AB |
In Stock: 0 $9.46890 |
![]() |
VS-1N2133AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 300V 60A DO203AB |
In Stock: 0 $9.46890 |
![]() |
VS-1N3765Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 700V 35A DO203AB |
In Stock: 0 $9.46890 |
![]() |
VS-1N2160Vishay General Semiconductor – Diodes Division |
DIODE MED POWER RECT DO-203AB |
In Stock: 0 $9.47240 |
![]() |
JAN1N5554USRoving Networks / Microchip Technology |
DIODE GEN PURP 1KV 5A D5B |
In Stock: 0 $9.13000 |