| Type | Description |
|---|---|
| Series: | - |
| Package: | Tube |
| Part Status: | Active |
| Diode Type: | Standard |
| Voltage - DC Reverse (Vr) (Max): | 1000 V |
| Current - Average Rectified (Io): | 80A |
| Voltage - Forward (Vf) (Max) @ If: | 1.35 V @ 80 A |
| Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr): | 480 ns |
| Current - Reverse Leakage @ Vr: | 100 µA @ 1000 V |
| Capacitance @ Vr, F: | - |
| Mounting Type: | Through Hole |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | TO-247AC |
| Operating Temperature - Junction: | -40°C ~ 150°C |
| Image | Part Number | Description | Stock / Unit Price |
|---|---|---|---|
JANTX1N5802Roving Networks / Microchip Technology |
DIODE GEN PURP 50V 1A AXIAL |
In Stock: 0 $8.10010 |
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VS-40HFLR40S02Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 40A DO203AB |
In Stock: 0 $8.40860 |
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VS-60HFU-200Vishay General Semiconductor – Diodes Division |
DIODE FAST 200V 60A DO203AB |
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1N6625Roving Networks / Microchip Technology |
DIODE GEN PURP 1.1KV 1A AXIAL |
In Stock: 0 $8.16400 |
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1N6626USRoving Networks / Microchip Technology |
DIODE GEN PURP 220V 1.75A A-MELF |
In Stock: 0 $8.16400 |
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1N1184RGeneSiC Semiconductor |
DIODE GEN PURP REV 100V 35A DO5 |
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1N1190GeneSiC Semiconductor |
DIODE GEN PURP 600V 35A DO5 |
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1N1188GeneSiC Semiconductor |
DIODE GEN PURP 400V 35A DO5 |
In Stock: 0 $8.51597 |
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1N1190RGeneSiC Semiconductor |
DIODE GEN PURP REV 600V 35A DO5 |
In Stock: 0 $8.51597 |
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1N3768GeneSiC Semiconductor |
DIODE GEN PURP 1KV 35A DO5 |
In Stock: 0 $8.51597 |