Image is for reference, please contact us to get the real picture
| Type | Description |
|---|---|
| Series: | - |
| Package: | Tube |
| Part Status: | Active |
| Diode Type: | Standard |
| Voltage - DC Reverse (Vr) (Max): | 600 V |
| Current - Average Rectified (Io): | 10A |
| Voltage - Forward (Vf) (Max) @ If: | 1.2 V @ 10 A |
| Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr): | 200 ns |
| Current - Reverse Leakage @ Vr: | 100 µA @ 200 V |
| Capacitance @ Vr, F: | - |
| Mounting Type: | Through Hole |
| Package / Case: | TO-220-2 Full Pack |
| Supplier Device Package: | TO-220-2 Full Pack |
| Operating Temperature - Junction: | -40°C ~ 150°C |
| Image | Part Number | Description | Stock / Unit Price |
|---|---|---|---|
 |
VS-10ETF10FP-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 10A TO220FP |
In Stock: 0 $1.46542 |
 |
VS-20ETS08STRR-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 20A TO263AB |
In Stock: 0 $1.40255 |
 |
VS-25ETS08STRL-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 25A TO263AB |
In Stock: 0 $1.40255 |
 |
VS-25ETS08STRR-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 25A TO263AB |
In Stock: 0 $1.40255 |
 |
VS-25ETS10STRL-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 25A TO263AB |
In Stock: 0 $1.40255 |
 |
VS-25ETS10STRR-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 25A TO263AB |
In Stock: 0 $1.40255 |
 |
VS-25ETS12STRL-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.2KV 25A TO263AB |
In Stock: 0 $1.40255 |
 |
VS-25ETS12STRR-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.2KV 25A TO263AB |
In Stock: 0 $1.40255 |
 |
LSM835G/TR13Roving Networks / Microchip Technology |
DIODE SCHOTTKY 35V 8A DO215AB |
In Stock: 0 $1.35200 |
|
LSM840G/TR13Roving Networks / Microchip Technology |
DIODE SCHOTTKY 40V 8A DO215AB |
In Stock: 0 $1.35200 |
