| Type | Description |
|---|---|
| Series: | - |
| Package: | Tube |
| Part Status: | Active |
| Diode Type: | Standard |
| Voltage - DC Reverse (Vr) (Max): | 400 V |
| Current - Average Rectified (Io): | 10A |
| Voltage - Forward (Vf) (Max) @ If: | 1.2 V @ 10 A |
| Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr): | 145 ns |
| Current - Reverse Leakage @ Vr: | 100 µA @ 400 V |
| Capacitance @ Vr, F: | - |
| Mounting Type: | Through Hole |
| Package / Case: | TO-220-2 |
| Supplier Device Package: | TO-220AC |
| Operating Temperature - Junction: | -40°C ~ 150°C |
| Image | Part Number | Description | Stock / Unit Price |
|---|---|---|---|
![]() |
1N4444-1Roving Networks / Microchip Technology |
DIODE SWITCHING |
In Stock: 0 $1.26101 |
JAN1N4150UR-1Roving Networks / Microchip Technology |
DIODE GEN PURP 50V 200MA DO213AA |
In Stock: 0 $1.26101 |
|
UFS520JE3/TR13Roving Networks / Microchip Technology |
DIODE GEN PURP 200V 5A DO214AB |
In Stock: 0 $1.27400 |
|
FESB16ATHE3/81Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 50V 16A TO263AB |
In Stock: 0 $1.32825 |
|
FESB16BTHE3/81Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 16A TO263AB |
In Stock: 0 $1.32825 |
|
FESB16CTHE3/81Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 150V 16A TO263AB |
In Stock: 0 $1.32825 |
|
FESB16DTHE3/81Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 16A TO263AB |
In Stock: 0 $1.32825 |
|
FESB16FTHE3/81Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 300V 16A TO263AB |
In Stock: 0 $1.32825 |
|
FESB16GTHE3/81Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 16A TO263AB |
In Stock: 0 $1.32825 |
|
FESB16HTHE3/81Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 500V 16A TO263AB |
In Stock: 0 $1.32825 |