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| Type | Description |
|---|---|
| Series: | - |
| Package: | Tray |
| Part Status: | Active |
| Diode Type: | Schottky |
| Voltage - DC Reverse (Vr) (Max): | 100 V |
| Current - Average Rectified (Io): | 1A |
| Voltage - Forward (Vf) (Max) @ If: | 840 mV @ 1 A |
| Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr): | - |
| Current - Reverse Leakage @ Vr: | 30 µA @ 100 V |
| Capacitance @ Vr, F: | 35pF @ 5V, 1MHz |
| Mounting Type: | Surface Mount |
| Package / Case: | Die |
| Supplier Device Package: | Die |
| Operating Temperature - Junction: | -55°C ~ 175°C |
| Image | Part Number | Description | Stock / Unit Price |
|---|---|---|---|
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AU3PJHM3_A/IVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 600V 1.7A TO277A |
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DIODE AVALANCH 1KV 1.4A TO277A |
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SRAS20100HMNGTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 100V 20A TO263AB |
In Stock: 0 $0.64004 |
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SRAS2020HMNGTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 20V 20A TO263AB |
In Stock: 0 $0.64004 |
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SRAS2030HMNGTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 30V 20A TO263AB |
In Stock: 0 $0.64004 |
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SRAS2040HMNGTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 40V 20A TO263AB |
In Stock: 0 $0.64004 |
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NSB8BT-E3/81Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 8A TO263AB |
In Stock: 0 $0.64080 |
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NSB8DT-E3/81Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 8A TO263AB |
In Stock: 0 $0.64080 |
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NSB8GT-E3/81Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 8A TO263AB |
In Stock: 0 $0.64080 |
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NSB8KT-E3/81Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 8A TO263AB |
In Stock: 0 $0.64080 |
