| Type | Description |
|---|---|
| Series: | - |
| Package: | Bulk |
| Part Status: | Obsolete |
| Diode Type: | Standard |
| Voltage - DC Reverse (Vr) (Max): | 200 V |
| Current - Average Rectified (Io): | 3.5A |
| Voltage - Forward (Vf) (Max) @ If: | 920 mV @ 3.5 A |
| Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr): | 100 ns |
| Current - Reverse Leakage @ Vr: | 50 µA @ 200 V |
| Capacitance @ Vr, F: | - |
| Mounting Type: | Through Hole |
| Package / Case: | Axial |
| Supplier Device Package: | - |
| Operating Temperature - Junction: | -40°C ~ 150°C |
| Image | Part Number | Description | Stock / Unit Price |
|---|---|---|---|
![]() |
HSM190JE3/TR13Roving Networks / Microchip Technology |
DIODE SCHOTTKY 90V 1A DO214BA |
In Stock: 0 $0.55000 |
LSM835JE3/TR13Roving Networks / Microchip Technology |
DIODE SCHOTTKY 35V 8A DO214AB |
In Stock: 0 $0.55000 |
|
LSM845JE3/TR13Roving Networks / Microchip Technology |
DIODE SCHOTTKY 45V 8A DO214AB |
In Stock: 0 $0.55000 |
|
JAN1N4148-1Roving Networks / Microchip Technology |
DIODE GEN PURP 75V 200MA DO35 |
In Stock: 0 $0.55000 |
|
MBR16100HC0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 100V 16A TO220AC |
In Stock: 0 $0.57106 |
|
VS-HFA08TB60SL-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 8A D2PAK |
In Stock: 0 $0.57245 |
|
VS-HFA08TB60SR-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 8A D2PAK |
In Stock: 0 $0.57245 |
|
NRVB1240MFST1GSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 40V 12A 5DFN |
In Stock: 0 $0.57255 |
|
VF20120S-M3/4WVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 20A 120V ITO220AB |
In Stock: 0 $0.58099 |
|
SE20DBHM3/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 3.9A TO263AC |
In Stock: 0 $0.60310 |