Image is for reference, please contact us to get the real picture
| Type | Description |
|---|---|
| Series: | - |
| Package: | Tape & Box (TB) |
| Part Status: | Active |
| Diode Type: | Standard |
| Voltage - DC Reverse (Vr) (Max): | 500 V |
| Current - Average Rectified (Io): | 3A |
| Voltage - Forward (Vf) (Max) @ If: | 1.7 V @ 3 A |
| Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr): | 75 ns |
| Current - Reverse Leakage @ Vr: | 10 µA @ 500 V |
| Capacitance @ Vr, F: | 36pF @ 4V, 1MHz |
| Mounting Type: | Through Hole |
| Package / Case: | DO-201AD, Axial |
| Supplier Device Package: | DO-201AD |
| Operating Temperature - Junction: | -55°C ~ 150°C |
| Image | Part Number | Description | Stock / Unit Price |
|---|---|---|---|
 |
V10P12-M3/86AVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 10A 120V TO-277A |
In Stock: 0 $0.38410 |
 |
SE10DD-M3/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 3A TO263AC |
In Stock: 50 $0.86000 |
 |
SE10DG-M3/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 3A TO263AC |
In Stock: 50 $0.86000 |
 |
1N4006GA0TSC (Taiwan Semiconductor) |
1A,800V,STD.GLASS PASSIVATED REC |
In Stock: 0 $0.36685 |
 |
VS-6EWX06FNTR-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 6A DPAK |
In Stock: 0 $0.36100 |
 |
VS-6EWX06FN-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 6A DPAK |
In Stock: 0 $0.38460 |
 |
VS-6EWH06FNTRL-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 6A D-PAK |
In Stock: 0 $0.38460 |
 |
VS-6EWH06FNTRR-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 6A D-PAK |
In Stock: 0 $0.38460 |
 |
VS-6EWL06FNTRL-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 6A D-PAK |
In Stock: 0 $0.38460 |
 |
VS-6EWL06FNTRR-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 6A D-PAK |
In Stock: 0 $0.38460 |
