| Type | Description |
|---|---|
| Series: | Automotive, AEC-Q101 |
| Package: | Tape & Box (TB) |
| Part Status: | Active |
| Diode Type: | Schottky |
| Voltage - DC Reverse (Vr) (Max): | 40 V |
| Current - Average Rectified (Io): | 5A |
| Voltage - Forward (Vf) (Max) @ If: | 550 mV @ 5 A |
| Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr): | - |
| Current - Reverse Leakage @ Vr: | 500 µA @ 40 V |
| Capacitance @ Vr, F: | - |
| Mounting Type: | Through Hole |
| Package / Case: | DO-201AD, Axial |
| Supplier Device Package: | DO-201AD |
| Operating Temperature - Junction: | -55°C ~ 125°C |
| Image | Part Number | Description | Stock / Unit Price |
|---|---|---|---|
ES3A V6GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 50V 3A DO214AB |
In Stock: 0 $0.17527 |
|
ES3B V6GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 3A DO214AB |
In Stock: 0 $0.17527 |
|
ES3C V6GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 150V 3A DO214AB |
In Stock: 0 $0.17527 |
|
ES3D V6GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 3A DO214AB |
In Stock: 0 $0.17527 |
|
ESH3B V6GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 3A DO214AB |
In Stock: 0 $0.17527 |
|
ESH3C V6GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 150V 3A DO214AB |
In Stock: 0 $0.17527 |
|
ESH3D V6GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 3A DO214AB |
In Stock: 0 $0.17527 |
|
MUR305S V6GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 50V 3A DO214AB |
In Stock: 0 $0.17527 |
|
MUR310S V6GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 3A DO214AB |
In Stock: 0 $0.17527 |
|
MUR315S V6GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 150V 3A DO214AB |
In Stock: 0 $0.17527 |