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| Type | Description |
|---|---|
| Series: | - |
| Package: | Tape & Reel (TR) |
| Part Status: | Active |
| Diode Type: | Schottky |
| Voltage - DC Reverse (Vr) (Max): | 200 V |
| Current - Average Rectified (Io): | 3A |
| Voltage - Forward (Vf) (Max) @ If: | 850 mV @ 3 A |
| Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr): | - |
| Current - Reverse Leakage @ Vr: | 500 µA @ 200 V |
| Capacitance @ Vr, F: | 250pF @ 4V, 1MHz |
| Mounting Type: | Surface Mount |
| Package / Case: | DO-214AC, SMA |
| Supplier Device Package: | DO-214AC (SMA) |
| Operating Temperature - Junction: | -50°C ~ 175°C |
| Image | Part Number | Description | Stock / Unit Price |
|---|---|---|---|
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CRS30I40A(TE85L,QMToshiba Electronic Devices and Storage Corporation |
DIODE SCHOTTKY 40V 3A S-FLAT |
In Stock: 0 $0.16539 |
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HS3A V6GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 50V 3A DO214AB |
In Stock: 0 $0.16556 |
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HS3B V6GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 3A DO214AB |
In Stock: 0 $0.16556 |
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HS3D V6GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 3A DO214AB |
In Stock: 0 $0.16556 |
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HS3F V6GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 300V 3A DO214AB |
In Stock: 0 $0.16556 |
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HS3G V6GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 3A DO214AB |
In Stock: 0 $0.16556 |
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HS3J V6GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 3A DO214AB |
In Stock: 0 $0.16556 |
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HS3K V6GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 800V 3A DO214AB |
In Stock: 0 $0.16556 |
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HS3M V6GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 3A DO214AB |
In Stock: 0 $0.16556 |
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S4K V6GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 800V 4A DO214AB |
In Stock: 0 $0.16556 |
