Type | Description |
---|---|
Series: | Automotive, AEC-Q101 |
Package: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Avalanche |
Voltage - DC Reverse (Vr) (Max): | 800 V |
Current - Average Rectified (Io): | 1.5A |
Voltage - Forward (Vf) (Max) @ If: | 1.15 V @ 1.5 A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 4 µs |
Current - Reverse Leakage @ Vr: | 1 µA @ 800 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | DO-214AC (SMA) |
Operating Temperature - Junction: | -55°C ~ 150°C |
Image | Part Number | Description | Stock / Unit Price |
---|---|---|---|
![]() |
BYG10DHE3_A/HVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 200V 1.5A DO214 |
In Stock: 0 $0.14493 |
![]() |
BYG10GHE3_A/HVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 400V 1.5A DO214 |
In Stock: 0 $0.14493 |
![]() |
BYG10JHE3_A/HVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 600V 1.5A DO214 |
In Stock: 0 $0.14493 |
![]() |
BYG10KHE3_A/HVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 800V 1.5A DO214 |
In Stock: 0 $0.14493 |
![]() |
ES2JHM4GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 2A DO214AA |
In Stock: 0 $0.14493 |
![]() |
EGL41AHE3_A/HVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 50V 1A DO213AB |
In Stock: 0 $0.14492 |
![]() |
EGL41BHE3_A/HVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 1A DO213AB |
In Stock: 0 $0.14492 |
![]() |
EGL41CHE3_A/HVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 150V 1A DO213AB |
In Stock: 0 $0.14492 |
![]() |
EGL41DHE3_A/HVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 1A DO213AB |
In Stock: 0 $0.14492 |
![]() |
EGL41FHE3_A/HVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 300V 1A DO213AB |
In Stock: 0 $0.14492 |