| Type | Description |
|---|---|
| Series: | - |
| Package: | Tape & Reel (TR) |
| Part Status: | Active |
| Diode Type: | Standard |
| Voltage - DC Reverse (Vr) (Max): | 600 V |
| Current - Average Rectified (Io): | 3A (DC) |
| Voltage - Forward (Vf) (Max) @ If: | 1.7 V @ 3 A |
| Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr): | 75 ns |
| Current - Reverse Leakage @ Vr: | 10 µA @ 600 V |
| Capacitance @ Vr, F: | 25pF @ 4V, 1MHz |
| Mounting Type: | Surface Mount |
| Package / Case: | DO-214AB, SMC |
| Supplier Device Package: | SMC (DO-214AB) |
| Operating Temperature - Junction: | -55°C ~ 150°C |
| Image | Part Number | Description | Stock / Unit Price |
|---|---|---|---|
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HS3G-K M6GTSC (Taiwan Semiconductor) |
50NS, 3A, 400V, HIGH EFFICIENT R |
In Stock: 0 $0.13122 |
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HS3D-K M6GTSC (Taiwan Semiconductor) |
50NS, 3A, 200V, HIGH EFFICIENT R |
In Stock: 0 $0.13122 |
AR1PK-M3/84AVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 800V 1A DO220AA |
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US1AHE3_A/HVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 50V 1A DO214AC |
In Stock: 0 $0.13141 |
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US1BHE3_A/HVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 1A DO214AC |
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BYM10-1000HE3/97Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 1A DO213AB |
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BYM10-100HE3/97Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 1A DO213AB |
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BYM10-200HE3/97Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 1A DO213AB |
In Stock: 0 $0.13761 |
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BYM10-400HE3/97Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 1A DO213AB |
In Stock: 0 $0.13761 |
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BYM10-50HE3/97Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 50V 1A DO213AB |
In Stock: 0 $0.13761 |