| Type | Description |
|---|---|
| Series: | Automotive, AEC-Q101 |
| Package: | Tape & Reel (TR) |
| Part Status: | Active |
| Diode Type: | Standard |
| Voltage - DC Reverse (Vr) (Max): | 400 V |
| Current - Average Rectified (Io): | 2A |
| Voltage - Forward (Vf) (Max) @ If: | 1.1 V @ 1 A |
| Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr): | 65 ns |
| Current - Reverse Leakage @ Vr: | 5 µA @ 400 V |
| Capacitance @ Vr, F: | - |
| Mounting Type: | Surface Mount |
| Package / Case: | DO-214AC, SMA |
| Supplier Device Package: | SMA |
| Operating Temperature - Junction: | -65°C ~ 175°C |
| Image | Part Number | Description | Stock / Unit Price |
|---|---|---|---|
ES2F R5GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 300V 2A DO214AA |
In Stock: 0 $0.12161 |
|
ESH2B R5GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 2A DO214AA |
In Stock: 0 $0.12161 |
|
ESH2C R5GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 150V 2A DO214AA |
In Stock: 0 $0.12161 |
|
![]() |
CMG07(TE12L,Q,M)Toshiba Electronic Devices and Storage Corporation |
DIODE GEN PURP 400V 1A M-FLAT |
In Stock: 0 $0.12161 |
S2D/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 1.5A DO214AA |
In Stock: 0 $0.12166 |
|
S2M/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 1.5A DO214 |
In Stock: 0 $0.12166 |
|
S2G/1Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 1.5A DO214AA |
In Stock: 0 $0.12166 |
|
S2K/1Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 1.5A DO214AA |
In Stock: 0 $0.12166 |
|
ES2AHM4GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 50V 2A DO214AA |
In Stock: 0 $0.12174 |
|
ES2BHM4GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 2A DO214AA |
In Stock: 0 $0.12174 |