Image is for reference, please contact us to get the real picture
| Type | Description |
|---|---|
| Series: | Automotive, AEC-Q101 |
| Package: | Tape & Box (TB) |
| Part Status: | Active |
| Diode Type: | Standard |
| Voltage - DC Reverse (Vr) (Max): | 600 V |
| Current - Average Rectified (Io): | 3A |
| Voltage - Forward (Vf) (Max) @ If: | 1 V @ 3 A |
| Speed: | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr): | - |
| Current - Reverse Leakage @ Vr: | 5 µA @ 600 V |
| Capacitance @ Vr, F: | 25pF @ 4V, 1MHz |
| Mounting Type: | Through Hole |
| Package / Case: | DO-201AD, Axial |
| Supplier Device Package: | DO-201AD |
| Operating Temperature - Junction: | -55°C ~ 150°C |
| Image | Part Number | Description | Stock / Unit Price |
|---|---|---|---|
 |
1N5407GHA0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 800V 3A DO201AD |
In Stock: 0 $0.11781 |
 |
1N5408GHA0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 3A DO201AD |
In Stock: 0 $0.11781 |
 |
SS1H9Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 90V 1A DO214AC |
In Stock: 0 $0.11798 |
 |
CMG06(TE12L,Q,M)Toshiba Electronic Devices and Storage Corporation |
DIODE GEN PURP 600V 1A M-FLAT |
In Stock: 0 $0.11797 |
|
CUS05(TE85L,Q,M)Toshiba Electronic Devices and Storage Corporation |
DIODE SCHOTTKY 20V 1A US-FLAT |
In Stock: 0 $0.11798 |
 |
VS-1EFU06HM3/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 1A DO219AB |
In Stock: 0 $0.12358 |
 |
ES2JAHR3GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 2A DO214AC |
In Stock: 0 $0.11816 |
 |
BYG24D-M3/TR3Vishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 200V 1.5A |
In Stock: 0 $0.12375 |
 |
BYG24G-M3/TR3Vishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 400V 1.5A |
In Stock: 0 $0.12375 |
 |
BYG24J-M3/TR3Vishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 600V 1.5A |
In Stock: 0 $0.12375 |
