| Type | Description |
|---|---|
| Series: | - |
| Package: | Tape & Reel (TR) |
| Part Status: | Active |
| Diode Type: | Schottky |
| Voltage - DC Reverse (Vr) (Max): | 45 V |
| Current - Average Rectified (Io): | 3A |
| Voltage - Forward (Vf) (Max) @ If: | 480 mV @ 3 A |
| Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr): | - |
| Current - Reverse Leakage @ Vr: | 500 µA @ 45 V |
| Capacitance @ Vr, F: | - |
| Mounting Type: | Surface Mount |
| Package / Case: | DO-214AC, SMA |
| Supplier Device Package: | DO-214AC (SMA) |
| Operating Temperature - Junction: | -55°C ~ 150°C |
| Image | Part Number | Description | Stock / Unit Price |
|---|---|---|---|
ES2BAHR3GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 2A DO214AC |
In Stock: 0 $0.11071 |
|
ES2CAHR3GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 150V 2A DO214AC |
In Stock: 0 $0.11071 |
|
ES2GAHR3GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 2A DO214AC |
In Stock: 0 $0.11071 |
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CMG05(TE12L,Q,M)Toshiba Electronic Devices and Storage Corporation |
DIODE GEN PURP 400V 1A M-FLAT |
In Stock: 0 $0.11071 |
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CRH02(TE85L,Q,M)Toshiba Electronic Devices and Storage Corporation |
DIODE GEN PURP 200V 500MA S-FLAT |
In Stock: 0 $0.11071 |
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CUS10I30A(TE85L,QMToshiba Electronic Devices and Storage Corporation |
DIODE SCHOTTKY 30V 1A US-FLAT |
In Stock: 0 $0.11072 |
ES1AHE3_A/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 50V 1A DO214AC |
In Stock: 0 $0.11083 |
|
ES1BHE3_A/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 1A DO214AC |
In Stock: 0 $0.11083 |
|
ES1CHE3_A/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 150V 1A DO214AC |
In Stock: 0 $0.11083 |
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UF4006-M3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 1A DO204AL |
In Stock: 0 $0.11083 |