| Type | Description |
|---|---|
| Series: | - |
| Package: | Tape & Reel (TR)Cut Tape (CT) |
| Part Status: | Active |
| Diode Type: | Schottky |
| Voltage - DC Reverse (Vr) (Max): | 40 V |
| Current - Average Rectified (Io): | 2A |
| Voltage - Forward (Vf) (Max) @ If: | 500 mV @ 2 A |
| Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr): | - |
| Current - Reverse Leakage @ Vr: | 500 µA @ 40 V |
| Capacitance @ Vr, F: | 160pF @ 4V, 1MHz |
| Mounting Type: | Surface Mount |
| Package / Case: | DO-221AC, SMA Flat Leads |
| Supplier Device Package: | SMAF |
| Operating Temperature - Junction: | -55°C ~ 150°C |
| Image | Part Number | Description | Stock / Unit Price |
|---|---|---|---|
1N4150W-HE3-18Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 50V 200MA SOD123 |
In Stock: 0 $0.03740 |
|
1N4151W-HE3-18Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 50V 150MA SOD123 |
In Stock: 0 $0.03740 |
|
1N4448W-HE3-18Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 75V 150MA SOD123 |
In Stock: 0 $0.03740 |
|
1N4448WS-HE3-18Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 75V 150MA SOD323 |
In Stock: 0 $0.03740 |
|
BAS16D-HE3-18Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 75V 250MA SOD123 |
In Stock: 0 $0.03740 |
|
1N4151W-HE3-08Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 50V 150MA SOD123 |
In Stock: 0 $0.03740 |
|
S1GR2TSC (Taiwan Semiconductor) |
1A, 400V, GLASS PASSIVATED SMD R |
In Stock: 0 $0.03740 |
|
S1GR3TSC (Taiwan Semiconductor) |
1A, 400V, GLASS PASSIVATED SMD R |
In Stock: 0 $0.03740 |
|
S1JR2TSC (Taiwan Semiconductor) |
1A, 600V, GLASS PASSIVATED SMD R |
In Stock: 0 $0.03740 |
|
S1JR3TSC (Taiwan Semiconductor) |
1A, 600V, GLASS PASSIVATED SMD R |
In Stock: 0 $0.03740 |