| Type | Description |
|---|---|
| Series: | - |
| Package: | Tray |
| Part Status: | Active |
| Diode Type: | Schottky |
| Voltage - DC Reverse (Vr) (Max): | 100 V |
| Current - Average Rectified (Io): | 30A |
| Voltage - Forward (Vf) (Max) @ If: | 840 mV @ 30 A |
| Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr): | - |
| Current - Reverse Leakage @ Vr: | 750 µA @ 100 V |
| Capacitance @ Vr, F: | 1000pF @ 5V, 1MHz |
| Mounting Type: | Surface Mount |
| Package / Case: | Die |
| Supplier Device Package: | Die |
| Operating Temperature - Junction: | 200°C (Max) |
| Image | Part Number | Description | Stock / Unit Price |
|---|---|---|---|
STTH1212DSTMicroelectronics |
DIODE GEN PURP 1.2KV 12A TO220AC |
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APT60D40BGRoving Networks / Microchip Technology |
DIODE GEN PURP 400V 60A TO247 |
In Stock: 66 $2.56000 |
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STTH1210DSTMicroelectronics |
DIODE GEN PURP 1KV 12A TO220AC |
In Stock: 636 $2.58000 |
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RHRG3060Sanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 600V 30A TO247-2 |
In Stock: 108 $2.74000 |
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ISL9R3060G2Sanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 600V 30A TO247-2 |
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SCS304AHGC9ROHM Semiconductor |
SHORTER RECOVERY TIME, ENABLING |
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SCS304AMCROHM Semiconductor |
DIODES SILICON CARBIDE |
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STTH806DIRGSTMicroelectronics |
DIODE GEN PURP 600V 8A TO220AC |
In Stock: 358 $2.73000 |
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VS-CPU6006L-N3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 30A TO247AD |
In Stock: 132 $2.92000 |
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D8025LTPWickmann / Littelfuse |
DIODE GEN PURP 800V 15.9A TO220 |
In Stock: 395 $2.93000 |