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| Type | Description |
|---|---|
| Series: | - |
| Package: | Bulk |
| Part Status: | Active |
| Diode Type: | Standard |
| Voltage - DC Reverse (Vr) (Max): | 600 V |
| Current - Average Rectified (Io): | 1A |
| Voltage - Forward (Vf) (Max) @ If: | 1.3 V @ 3 A |
| Speed: | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr): | 2 µs |
| Current - Reverse Leakage @ Vr: | 500 nA @ 600 V |
| Capacitance @ Vr, F: | - |
| Mounting Type: | Through Hole |
| Package / Case: | A, Axial |
| Supplier Device Package: | - |
| Operating Temperature - Junction: | -65°C ~ 200°C |
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|---|---|---|---|
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1N5614Roving Networks / Microchip Technology |
DIODE GEN PURP 200V 1A AXIAL |
In Stock: 695 $3.08000 |
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STTH3012WSTMicroelectronics |
DIODE GEN PURP 1.2KV 30A DO247 |
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SCS215AJTLLROHM Semiconductor |
DIODE SCHOTTKY 650V 15A TO263AB |
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IDH02G120C5XKSA1IR (Infineon Technologies) |
DIODE SCHOT 1200V 2A TO220-2-1 |
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1N5620Roving Networks / Microchip Technology |
DIODE GEN PURP 800V 1A AXIAL |
In Stock: 472 $3.36000 |
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DSEI30-06AWickmann / Littelfuse |
DIODE GEN PURP 600V 37A TO247AD |
In Stock: 0 $3.52000 |
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SCS206AGCROHM Semiconductor |
DIODE SCHOTTKY 650V 6A TO220AC |
In Stock: 337 $3.53000 |
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VS-8EWF12S-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.2KV 8A TO252 |
In Stock: 7,828 $3.56000 |
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1N5615Roving Networks / Microchip Technology |
DIODE GEN PURP 200V 1A AXIAL |
In Stock: 1,071 $3.49000 |
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1N3611Roving Networks / Microchip Technology |
DIODE GEN PURP 200V 1A AXIAL |
In Stock: 904 $3.49000 |
