| Type | Description |
|---|---|
| Series: | - |
| Package: | Tube |
| Part Status: | Active |
| Diode Type: | Standard |
| Voltage - DC Reverse (Vr) (Max): | 600 V |
| Current - Average Rectified (Io): | 12A |
| Voltage - Forward (Vf) (Max) @ If: | 2.9 V @ 12 A |
| Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr): | 45 ns |
| Current - Reverse Leakage @ Vr: | 45 µA @ 600 V |
| Capacitance @ Vr, F: | - |
| Mounting Type: | Through Hole |
| Package / Case: | TO-220-2 Insulated, TO-220AC |
| Supplier Device Package: | TO-220AC ins |
| Operating Temperature - Junction: | 175°C (Max) |
| Image | Part Number | Description | Stock / Unit Price |
|---|---|---|---|
1N5616Roving Networks / Microchip Technology |
DIODE GEN PURP 400V 1A AXIAL |
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STTH3010DSTMicroelectronics |
DIODE GEN PURP 1KV 30A TO220AC |
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APT60D60BGRoving Networks / Microchip Technology |
DIODE GEN PURP 600V 60A TO247 |
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VS-10ETF12FP-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.2KV 10A TO220FP |
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STPS20M100STSTMicroelectronics |
DIODE SCHOTTKY 100V 20A TO220AB |
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VS-20ETS12-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.2KV 20A TO220AC |
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STTH3012DSTMicroelectronics |
DIODE GEN PURP 1.2KV 30A TO220AC |
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STTH1210DISTMicroelectronics |
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RHRG5060Sanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 600V 50A TO247-2 |
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VS-8EWS12S-M3Vishay General Semiconductor – Diodes Division |
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