Type | Description |
---|---|
Series: | - |
Package: | Tray |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): | 650 V |
Current - Continuous Drain (Id) @ 25°C: | 16A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 8V |
Rds On (Max) @ Id, Vgs: | 180mOhm @ 10A, 8V |
Vgs(th) (Max) @ Id: | 2.6V @ 500µA |
Gate Charge (Qg) (Max) @ Vgs: | 6.2 nC @ 4.5 V |
Vgs (Max): | ±18V |
Input Capacitance (Ciss) (Max) @ Vds: | 720 pF @ 480 V |
FET Feature: | - |
Power Dissipation (Max): | 81W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 3-PQFN (8x8) |
Package / Case: | 3-PowerDFN |
Image | Part Number | Description | Stock / Unit Price |
---|---|---|---|
![]() |
SI3139KL3-TPMicro Commercial Components (MCC) |
MOSFET P-CH 20V 660MA DFN1006-3 |
In Stock: 0 $0.00000 |
![]() |
SI3134KL3-TPMicro Commercial Components (MCC) |
MOSFET N-CH 20V 750MA DFN1006-3 |
In Stock: 0 $0.00000 |
![]() |
IPC65SR048CFDAE8206X2SA2IR (Infineon Technologies) |
MOSFET N-CH |
In Stock: 0 $0.00000 |
![]() |
IPC65SR048CFDAE8206X2SA1IR (Infineon Technologies) |
MOSFET N-CH |
In Stock: 0 $0.00000 |
![]() |
IPC65SR110CFDAX2MA1IR (Infineon Technologies) |
MOSFET N-CH |
In Stock: 0 $0.00000 |
![]() |
R6020ENZ4C13ROHM Semiconductor |
MOSFET N-CH 600V 20A TO247 |
In Stock: 0 $0.00000 |
![]() |
R6035ENZ4C13ROHM Semiconductor |
MOSFET N-CH 600V 35A TO247 |
In Stock: 0 $0.00000 |
![]() |
R6035KNZ4C13ROHM Semiconductor |
MOSFET N-CH 600V 35A TO247 |
In Stock: 0 $0.00000 |
![]() |
R6024ENZ4C13ROHM Semiconductor |
MOSFET N-CH 600V 24A TO247 |
In Stock: 0 $0.00000 |
![]() |
R6030KNZ4C13ROHM Semiconductor |
MOSFET N-CH 600V 30A TO247 |
In Stock: 0 $0.00000 |