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| Type | Description |
|---|---|
| Series: | Automotive, AEC-Q101, OptiMOS™ |
| Package: | Tube |
| Part Status: | Obsolete |
| FET Type: | P-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 40 V |
| Current - Continuous Drain (Id) @ 25°C: | 80A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 7.7mOhm @ 80A, 10V |
| Vgs(th) (Max) @ Id: | 4V @ 150µA |
| Gate Charge (Qg) (Max) @ Vgs: | 89 nC @ 10 V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 6085 pF @ 25 V |
| FET Feature: | - |
| Power Dissipation (Max): | 88W (Tc) |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | PG-TO262-3-1 |
| Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Image | Part Number | Description | Stock / Unit Price |
|---|---|---|---|
 |
IPI80P04P4L04AKSA1IR (Infineon Technologies) |
MOSFET P-CH 40V 80A TO262-3 |
In Stock: 0 $0.00000 |
 |
IPI80P04P4L06AKSA1IR (Infineon Technologies) |
MOSFET P-CH 40V 80A TO262-3 |
In Stock: 0 $0.00000 |
 |
IPI80P04P4L08AKSA1IR (Infineon Technologies) |
MOSFET P-CH 40V 80A TO262-3 |
In Stock: 0 $0.00000 |
 |
IPL65R190E6AUMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 20.2A 4VSON |
In Stock: 0 $0.00000 |
 |
IPL65R420E6AUMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 10.1A THIN-PAK |
In Stock: 0 $0.00000 |
 |
IPL65R460CFDAUMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 8.3A THIN-PAK |
In Stock: 0 $0.00000 |
 |
IPL65R660E6AUMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 7A THIN-PAK |
In Stock: 0 $0.00000 |
 |
IPL65R725CFDAUMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 5.8A THIN-PAK |
In Stock: 0 $0.00000 |
 |
IPP65R190CFDAAKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 17.5A TO220-3 |
In Stock: 0 $0.00000 |
 |
IPP65R660CFDAAKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 6A TO220-3 |
In Stock: 0 $0.00000 |
