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| Type | Description |
|---|---|
| Series: | - |
| Package: | Tube |
| Part Status: | Obsolete |
| FET Type: | - |
| Technology: | SiC (Silicon Carbide Junction Transistor) |
| Drain to Source Voltage (Vdss): | 1200 V |
| Current - Continuous Drain (Id) @ 25°C: | 160A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | - |
| Rds On (Max) @ Id, Vgs: | 10mOhm @ 100A |
| Vgs(th) (Max) @ Id: | - |
| Gate Charge (Qg) (Max) @ Vgs: | - |
| Vgs (Max): | - |
| Input Capacitance (Ciss) (Max) @ Vds: | 14400 pF @ 800 V |
| FET Feature: | - |
| Power Dissipation (Max): | 535W (Tc) |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Chassis Mount |
| Supplier Device Package: | SOT-227 |
| Package / Case: | SOT-227-4, miniBLOC |
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|---|---|---|---|
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GA20SICP12-247GeneSiC Semiconductor |
TRANS SJT 1200V 45A TO247AB |
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TRANSISTOR 1200V 100A TO263-7 |
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MOSFET N-CH 400V 500MA SOT223-4 |
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MOSFET N-CH 800V 190MA SOT223-4 |
In Stock: 0 $0.00000 |
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MOSFET N-CH 150V 50A TO220-3 |
In Stock: 0 $0.00000 |
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MOSFET N-CH 8TISON |
In Stock: 0 $0.00000 |
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MOSFET N-CH 600V 10.6A TO252-3 |
In Stock: 0 $0.00000 |
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IPD50R950CEATMA1IR (Infineon Technologies) |
MOSFET N-CH 500V 4.3A TO252-3 |
In Stock: 0 $0.00000 |
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MOSFET N-CH 500V 6.1A TO252-3 |
In Stock: 0 $0.00000 |
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IPD50R500CEATMA1IR (Infineon Technologies) |
MOSFET N-CH 500V 7.6A TO252-3 |
In Stock: 0 $0.00000 |
