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| Type | Description |
|---|---|
| Series: | - |
| Package: | Tube |
| Part Status: | Obsolete |
| FET Type: | - |
| Technology: | SiC (Silicon Carbide Junction Transistor) |
| Drain to Source Voltage (Vdss): | 650 V |
| Current - Continuous Drain (Id) @ 25°C: | 7A (Tc) (165°C) |
| Drive Voltage (Max Rds On, Min Rds On): | - |
| Rds On (Max) @ Id, Vgs: | 170mOhm @ 7A |
| Vgs(th) (Max) @ Id: | - |
| Gate Charge (Qg) (Max) @ Vgs: | - |
| Vgs (Max): | - |
| Input Capacitance (Ciss) (Max) @ Vds: | 720 pF @ 35 V |
| FET Feature: | - |
| Power Dissipation (Max): | 80W (Tc) |
| Operating Temperature: | -55°C ~ 225°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-257 |
| Package / Case: | TO-257-3 |
| Image | Part Number | Description | Stock / Unit Price |
|---|---|---|---|
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2N7638-GAGeneSiC Semiconductor |
TRANS SJT 650V 8A TO276 |
In Stock: 0 $0.00000 |
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2N7639-GAGeneSiC Semiconductor |
TRANS SJT 650V 15A TO257 |
In Stock: 0 $0.00000 |
|
2N7640-GAGeneSiC Semiconductor |
TRANS SJT 650V 16A TO276 |
In Stock: 0 $0.00000 |
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SISA18DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 38.3A PPAK1212-8 |
In Stock: 0 $0.00000 |
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SIR642DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 40V 60A PPAK SO-8 |
In Stock: 0 $0.00000 |
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STL70N10F3STMicroelectronics |
MOSFET N CH 100V 82A PWRFLAT 5X6 |
In Stock: 0 $0.00000 |
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BSZ023N04LSATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 22A/40A TSDSON |
In Stock: 0 $0.00000 |
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IPA50R190CEIR (Infineon Technologies) |
MOSFET N-CH 500V 18.5A TO220-FP |
In Stock: 0 $0.00000 |
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IPA50R650CEIR (Infineon Technologies) |
MOSFET N-CH 500V 6.1A TO220-FP |
In Stock: 0 $0.00000 |
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IPA50R380CEIR (Infineon Technologies) |
MOSFET N-CH 500V 9.9A TO220-FP |
In Stock: 0 $0.00000 |
