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| Type | Description |
|---|---|
| Series: | HEXFET® |
| Package: | Tube |
| Part Status: | Obsolete |
| FET Type: | P-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 40 V |
| Current - Continuous Drain (Id) @ 25°C: | 56A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs: | 16mOhm @ 37A, 10V |
| Vgs(th) (Max) @ Id: | 3V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs: | 224 nC @ 10 V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 7676 pF @ 25 V |
| FET Feature: | - |
| Power Dissipation (Max): | 143W (Tc) |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-220AB |
| Package / Case: | TO-220-3 |
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|---|---|---|---|
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IRFB3077GPBFIR (Infineon Technologies) |
MOSFET N-CH 75V 120A TO220AB |
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MOSFET N-CH 100V 120A TO220AB |
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MOSFET N-CH 60V 195A TO220AB |
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MOSFET N-CH 30V 86A IPAK |
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MOSFET N-CH 55V 120A D2PAK |
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MOSFET N-CH 25V 12A DIRECTFET |
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