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TPC8018-H(TE12LQM)

TPC8018-H(TE12LQM)

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Manufacturer Part
TPC8018-H(TE12LQM)
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
MOSFET N-CH 30V 18A 8SOP
Category
Discrete Semiconductor Products
Family
Transistors - FETs, MOSFETs - Single
Series
-
InStock
1347
Datasheets Online
-
Inquiry

Product Specifications

Type Description
Series:-
Package:Tape & Reel (TR)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:18A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4.6mOhm @ 9A, 10V
Vgs(th) (Max) @ Id:2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:38 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2265 pF @ 10 V
FET Feature:-
Power Dissipation (Max):1W (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOP (5.5x6.0)
Package / Case:8-SOIC (0.173", 4.40mm Width)

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