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| Type | Description |
|---|---|
| Series: | HEXFET® |
| Package: | Tube |
| Part Status: | Obsolete |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 100 V |
| Current - Continuous Drain (Id) @ 25°C: | 9.4A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 210mOhm @ 5.6A, 10V |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 25 nC @ 10 V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 330 pF @ 25 V |
| FET Feature: | - |
| Power Dissipation (Max): | 48W (Tc) |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | D-Pak |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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|---|---|---|---|
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IRLR7807ZCPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 43A DPAK |
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MOSFET N-CH 40V 42A IPAK |
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MOSFET N-CH 30V 260A D2PAK |
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MOSFET N-CH 20V 180A D2PAK |
In Stock: 0 $0.00000 |
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IRF7240PBFIR (Infineon Technologies) |
MOSFET P-CH 40V 10.5A 8SO |
In Stock: 0 $0.00000 |
