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| Type | Description |
|---|---|
| Series: | * |
| Package: | Tape & Reel (TR) |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss): | 1000 V |
| Current - Continuous Drain (Id) @ 25°C: | 35A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 15V |
| Rds On (Max) @ Id, Vgs: | 78mOhm @ 20A, 15V |
| Vgs(th) (Max) @ Id: | 3.5V @ 5mA |
| Gate Charge (Qg) (Max) @ Vgs: | 35 nC @ 15 V |
| Vgs (Max): | +15V, -4V |
| Input Capacitance (Ciss) (Max) @ Vds: | 660 pF @ 600 V |
| FET Feature: | - |
| Power Dissipation (Max): | 113.5W (Tc) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | TO-263-7 |
| Package / Case: | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
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|---|---|---|---|
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EPC2001EPC |
GANFET N-CH 100V 25A DIE OUTLINE |
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GANFET N-CH 100V 6A DIE OUTLINE |
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GANFET N-CH 200V 12A DIE |
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GANFET N-CH 200V 3A DIE |
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GANFET N-CH 40V 10A DIE OUTLINE |
In Stock: 0 $0.00000 |
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EPC2015EPC |
GANFET N-CH 40V 33A DIE OUTLINE |
In Stock: 0 $0.00000 |
