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| Type | Description |
|---|---|
| Series: | HEXFET® |
| Package: | Bulk |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 20 V |
| Current - Continuous Drain (Id) @ 25°C: | 1.2A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 2.7V, 4.5V |
| Rds On (Max) @ Id, Vgs: | 250mOhm @ 930mA, 4.5V |
| Vgs(th) (Max) @ Id: | 700mV @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 3.9 nC @ 4.5 V |
| Vgs (Max): | ±12V |
| Input Capacitance (Ciss) (Max) @ Vds: | 110 pF @ 15 V |
| FET Feature: | - |
| Power Dissipation (Max): | 540mW (Ta) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | Micro3™/SOT-23 |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
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