| Type | Description |
|---|---|
| Series: | TrenchP™ |
| Package: | Tube |
| Part Status: | Active |
| FET Type: | P-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 50 V |
| Current - Continuous Drain (Id) @ 25°C: | 48A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 30mOhm @ 24A, 10V |
| Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 53 nC @ 10 V |
| Vgs (Max): | ±15V |
| Input Capacitance (Ciss) (Max) @ Vds: | 3660 pF @ 25 V |
| FET Feature: | - |
| Power Dissipation (Max): | 150W (Tc) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | TO-263 (IXTA) |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Image | Part Number | Description | Stock / Unit Price |
|---|---|---|---|
IRFBC40LPBFVishay / Siliconix |
MOSFET N-CH 600V 6.2A TO262-3 |
In Stock: 0 $2.46246 |
|
NTMFS5C404NLTT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 52A/370A 5DFN |
In Stock: 0 $2.46400 |
|
![]() |
NVATS5A304PLZT4GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CHANNEL 60V 120A ATPAK |
In Stock: 0 $2.46900 |
TK10A60W,S4VXToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 9.7A TO220SIS |
In Stock: 0 $2.47500 |
|
![]() |
NTMFS5H600NLT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 35A/250A 5DFN |
In Stock: 0 $2.47500 |
IPB60R199CPAATMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 16A D2PAK |
In Stock: 0 $2.47625 |
|
STH272N6F7-6AGSTMicroelectronics |
MOSFET N-CH 60V 180A H2PAK-6 |
In Stock: 0 $2.48500 |
|
TK16A60W,S4XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 15.8A TO220 |
In Stock: 0 $2.48710 |
|
![]() |
IPL60R115CFD7AUMA1IR (Infineon Technologies) |
HIGH POWER_NEW |
In Stock: 0 $2.49060 |
IXTA75N10P-TRLWickmann / Littelfuse |
MOSFET N-CH 100V 75A TO263 |
In Stock: 0 $2.49066 |