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| Type | Description |
|---|---|
| Series: | * |
| Package: | Tube |
| Part Status: | Active |
| FET Type: | - |
| Technology: | - |
| Drain to Source Voltage (Vdss): | - |
| Current - Continuous Drain (Id) @ 25°C: | - |
| Drive Voltage (Max Rds On, Min Rds On): | - |
| Rds On (Max) @ Id, Vgs: | - |
| Vgs(th) (Max) @ Id: | - |
| Gate Charge (Qg) (Max) @ Vgs: | - |
| Vgs (Max): | - |
| Input Capacitance (Ciss) (Max) @ Vds: | - |
| FET Feature: | - |
| Power Dissipation (Max): | - |
| Operating Temperature: | - |
| Mounting Type: | - |
| Supplier Device Package: | - |
| Package / Case: | - |
| Image | Part Number | Description | Stock / Unit Price |
|---|---|---|---|
 |
NVMTS001N06CLTXGSanyo Semiconductor/ON Semiconductor |
T6 60V LL PQFN8*8 EXPANSI |
In Stock: 0 $2.38890 |
 |
IXTA16N50P-TRLWickmann / Littelfuse |
MOSFET N-CH 500V 16A TO263 |
In Stock: 0 $2.39024 |
 |
NTMFS5C404NLTT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 5DFN |
In Stock: 0 $2.40000 |
|
NTMFS5C404NT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 53A/378A 5DFN |
In Stock: 0 $2.40000 |
 |
SIHB22N60EL-GE3Vishay / Siliconix |
MOSFET N-CH 600V 21A TO263 |
In Stock: 0 $2.40000 |
 |
IPB60R125CFD7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 18A TO263-3-2 |
In Stock: 0 $2.40065 |
 |
TK13A50DA(STA4,Q,MToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 500V 12.5A TO220SIS |
In Stock: 0 $2.40360 |
 |
TK14A45DA(STA4,QM)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 450V 13.5A TO220SIS |
In Stock: 0 $2.40360 |
|
IPC218N04N3X7SA1IR (Infineon Technologies) |
MV POWER MOS |
In Stock: 0 $2.40625 |
 |
IXTA05N100-TRLWickmann / Littelfuse |
MOSFET N-CH 1000V 750MA TO263 |
In Stock: 0 $2.41033 |
