Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100 V |
Current - Continuous Drain (Id) @ 25°C: | 140A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 5mOhm @ 13A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 111.7 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 8474 pF @ 50 V |
FET Feature: | - |
Power Dissipation (Max): | 187W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220AB |
Package / Case: | TO-220-3 |
Image | Part Number | Description | Stock / Unit Price |
---|---|---|---|
![]() |
AOK40N30LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 300V 40A TO247 |
In Stock: 0 $2.29550 |
![]() |
TK12A53D(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 525V 12A TO220SIS |
In Stock: 0 $2.29620 |
![]() |
AOB2502LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 150V 106A TO263 |
In Stock: 0 $2.29711 |
![]() |
TK11A55D(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 550V 11A TO220SIS |
In Stock: 0 $2.29900 |
![]() |
FCB099N65S3Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 30A D2PAK-3 |
In Stock: 9,600 $2.30076 |
![]() |
IXTP15P15TWickmann / Littelfuse |
MOSFET P-CH 150V 15A TO220AB |
In Stock: 800 $2.30567 |
![]() |
IXTP26P10TWickmann / Littelfuse |
MOSFET P-CH 100V 26A TO220AB |
In Stock: 2,250 $2.30567 |
![]() |
TK16E60W,S1VXToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 15.8A TO220 |
In Stock: 0 $2.30720 |
![]() |
SIHA22N60EL-E3Vishay / Siliconix |
MOSFET N-CHANNEL 600V 21A TO220 |
In Stock: 0 $2.31000 |
![]() |
IPB240N03S4LR8ATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 240A TO263-7 |
In Stock: 0 $2.31175 |