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| Type | Description |
|---|---|
| Series: | Automotive, AEC-Q101 |
| Package: | Tube |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 650 V |
| Current - Continuous Drain (Id) @ 25°C: | 8A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 1.3Ohm @ 4A, 10V |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 30 nC @ 10 V |
| Vgs (Max): | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds: | 1217 pF @ 25 V |
| FET Feature: | - |
| Power Dissipation (Max): | 125W (Tc) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-220AB |
| Package / Case: | TO-220-3 |
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|---|---|---|---|
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MOSFET N-CH 150V 25A TO263 |
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IPB80P03P405ATMA1IR (Infineon Technologies) |
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MOSFET P-CH 30V 80A TO263-3 |
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AOB296LAlpha and Omega Semiconductor, Inc. |
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IRFBF20LPBFVishay / Siliconix |
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NTMFS5C426NT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 41A/235A 5DFN |
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NVMFS6H801NLWFT1GSanyo Semiconductor/ON Semiconductor |
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In Stock: 3,600 $1.27820 |
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TK2A65D(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 650V 2A TO220SIS |
In Stock: 0 $1.28120 |
