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| Type | Description |
|---|---|
| Series: | NexFET™ |
| Package: | Tape & Reel (TR)Cut Tape (CT) |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 40 V |
| Current - Continuous Drain (Id) @ 25°C: | 194A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs: | 2.6mOhm @ 100A, 10V |
| Vgs(th) (Max) @ Id: | 2.4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 64 nC @ 10 V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 5940 pF @ 20 V |
| FET Feature: | - |
| Power Dissipation (Max): | 188W (Ta) |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | DDPAK/TO-263-3 |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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|---|---|---|---|
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SIHF640S-GE3Vishay / Siliconix |
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MOSFET N-CH 600V 7A TO262 |
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IPD90N10S406ATMA1IR (Infineon Technologies) |
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IRFI9610GPBFVishay / Siliconix |
MOSFET P-CH 200V 2A TO220-3 |
In Stock: 0 $1.07184 |
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TK3A60DA(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 2.5A TO220SIS |
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IRF610STRRPBFVishay / Siliconix |
MOSFET N-CH 200V 3.3A D2PAK |
In Stock: 0 $1.07608 |
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IRF614STRRPBFVishay / Siliconix |
MOSFET N-CH 250V 2.7A D2PAK |
In Stock: 0 $1.07608 |
