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| Type | Description |
|---|---|
| Series: | POWER MOS V® |
| Package: | Tube |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 1200 V |
| Current - Continuous Drain (Id) @ 25°C: | 16A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 800mOhm @ 8A, 10V |
| Vgs(th) (Max) @ Id: | 4V @ 2.5mA |
| Gate Charge (Qg) (Max) @ Vgs: | 485 nC @ 10 V |
| Vgs (Max): | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds: | 7800 pF @ 25 V |
| FET Feature: | - |
| Power Dissipation (Max): | 520W (Tc) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-264 (L) |
| Package / Case: | TO-264-3, TO-264AA |
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|---|---|---|---|
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TRANS SJT N-CH 1200V 52A TO247-3 |
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G3R30MT12JGeneSiC Semiconductor |
SIC MOSFET N-CH 96A TO263-7 |
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IXFK27N80QWickmann / Littelfuse |
MOSFET N-CH 800V 27A TO264AA |
In Stock: 3 $23.42000 |
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STE48NM50STMicroelectronics |
MOSFET N-CH 550V 48A ISOTOP |
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MOSFET N-CH 800V 39A SOT-227B |
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